Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-11-19
1986-10-28
Ozaki, George T.
Metal working
Method of mechanical manufacture
Assembling or joining
29590, 29591, 427 90, H01L 2144
Patent
active
046190376
ABSTRACT:
A method of manufacturing a semiconductor device is disclosed. In the manufacturing method, an impurity diffusion layer as a first interconnection layer is formed on a semiconductor substrate. Then, an aluminum layer as a second interconnection layer is formed on the semiconductor substrate with an insulating film interposing therebetween. Another insulating layer is further formed on the aluminum layer. An anisotropic etching process is applied to the insulating layer, the second interconnection layer, and the insulating film, thereby forming a contact extending up to the first interconnection layer through these layers, and the insulating film. After the formation of the contact hole, an aluminum layer is formed on the entire surface of the insulating film including the inner surface of the contact hole. The aluminum layer formed in the contact hole electrically interconnects the first and second interconnecting layers.
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Maeguchi Kenji
Matsumura Homare
Taguchi Shinji
Kabushiki Kaisha Toshiba
Ozaki George T.
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