Method of manufacturing a semiconductor device

Fishing – trapping – and vermin destroying

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437187, 437194, 437195, 437228, 148DIG51, H01L 2188

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049563122

ABSTRACT:
A method of manufacturing a semiconductor device is described in which electrical contact is provided to an area (10) of an electrically conductive level (1) exposed through an opening (2) in a covering layer (3). A further layer is provided over the covering layer (3) as a first layer (4) of one material provided to a first thickness on the covering layer (3) and a second layer (5) of a different material provided to a second thickness on the first layer. The further layer is then etched anisotropically using an anisotropic etching process which etches the first and second layers (4) and (5) at different rates with the first layer (4) being etched more slowly than the second layer (5) so that, after anisotropic etching to expose the surface (3a) of the covering layer (3) and the area (10) of the electrically conductive level (1), the side walls (2a) of the opening (2) remain covered by the one material (40 ) and portions (50) of the different material extend on the one material (40) from the exposed area (10) up the side walls (2a) of the opening (2) for a distance less than the depth of the opening (2) in relation to the thickness of the first layer and the different rates at which the first and second layers 4 and 5 are etched. An electrically conductive layer (6) is then provided on the covering layer (3) to form an electrical contact with the exposed area (10) of the electrically conductive level (1).

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