Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1992-05-15

1994-03-08

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 44, 437235, 437238, 437239, H01L 21336, H01L 2128, H01L 21285

Patent

active

052926737

ABSTRACT:
When a MOSFET containing a tantalum pentoxide film as a gate insulating film is formed, ion implantation is applied such that the end of an insulating film containing a tantalum pentoxide film situates to the outside of a gate electrode to thereby form source and drain regions. This can effectively prevent troubles such as short-circuitting due to tantalum pentoxide film and a highly reliable MOSFET can be obtained without applying light oxidation.

REFERENCES:
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patent: 4356623 (1982-11-01), Hunter
patent: 4462863 (1984-07-01), Nishimatsu et al.
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patent: 4844767 (1989-07-01), Okudaira et al.
patent: 4992136 (1991-02-01), Tachi et al.
Tsang et al., "Fabrication of High-Performance LDDFET's With Oxide Sidewall-Spacer Technology", IEEE Trans. on Electron Devices, vol. ED-29, No. 4, Apr. 1982, pp. 590-596.
Ghandhi, VLSI Fabrication Principles, John Wiley and Sons, 1983, pp. 353-354, 512-514.

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