Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1984-09-12

1987-08-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

29589, 357 71, 357 59, 357 231, 437186, 437246, H01L 2128, H01L 2130

Patent

active

046867597

ABSTRACT:
Method of manufacturing a semiconductor device and semiconductor device manufactured by the use of such a method.
A method of contacting narrow regions, such as narrow polysilicon gates of a CCD, having widths of, for example, 4 .mu.m. Upper layers, which are required for the CCD electrodes, are used as etching masks for contacts to the lower electrode layers. Two upper layers define two contact openings of 4 .mu.m which are displaced both with respect to each other and with respect to the region to be contacted. Therefore it is possible to define a contact opening which is smaller than 4 .mu.m and which is aligned accurately above the gate to be contacted.

REFERENCES:
patent: 3681147 (1972-08-01), Dhaka et al.
patent: 4306353 (1981-12-01), Jacobs et al.
patent: 4380863 (1983-04-01), Rao
Beck, G. A., et al. "High Density Frame Transfer Image Sensor" Proc. of the 14th Conf. (1982 Int'l.) on Solid State Devices, Tokyo, 1982.
Jap. J. App. Phys., vol. 22 (1983) Supp. 22-1, pp. 109-112.

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