Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-04-22
1987-02-03
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
118720, 118726, 148DIG6, 148DIG169, 156612, 156DIG103, H01L 21203, H01L 21302
Patent
active
046407200
ABSTRACT:
A method of manufacturing a semiconductor device, in which method a plurality of epitaxial layers are deposited by molecular beam epitaxy. A significant problem in such a method is the variation in the flux emitted by an effusion cell after the shutter associated with that cell has been opened, this resulting in undesired variations in the composition in the thickness direction of the epitaxial layer being grown. In a method according to the invention, when the shutter of a molecular beam source is opened, the rate of input of heat to that source is increased by a predetermined value so that the temperature of that source does not change substantially as a result of the opening of that shutter, and when the shutter is closed the rate of input of heat to that source is reduced by the predetermined value.
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Chang et al., "Fabrication of Multilayer Semiconductor Devices", I.B.M. Tech. Discl. Bull., vol. 15, No. 2, Jul. 1972, pp. 365-366.
Miller Paul R.
Saba William G.
U.S. Philips Corporation
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