Metal fusion bonding – Process – Metal to nonmetal with separate metallic filler
Patent
1989-10-10
1991-10-15
Heinrich, Samuel M.
Metal fusion bonding
Process
Metal to nonmetal with separate metallic filler
228124, 22826312, 29841, 437218, H01L 2308
Patent
active
050567020
ABSTRACT:
A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm.sup.2 to 10 mg/cm.sup.2, mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.
REFERENCES:
patent: 3063144 (1962-11-01), Palmour, III
patent: 3339267 (1967-09-01), Bronnes et al.
patent: 3371406 (1968-03-01), Bronnes et al.
patent: 3487536 (1970-01-01), Goldstein
patent: 4098452 (1978-07-01), Webster et al.
patent: 4611745 (1986-09-01), Nakahashi et al.
patent: 4630767 (1986-01-01), Mizuhara
patent: 4667871 (1987-05-01), Mizuhara
patent: 4729504 (1988-03-01), Edamura
patent: 4917642 (1990-04-01), Nakahashi et al.
Welding Journal, "Ceramic-to-Metal Joining with Active Brazing Filler Metal", pp. 27-32, Oct. 1985.
Homma Mitsutaka
Miyakawa Shigeru
Nakahashi Masako
Niwa Shozi
Okawa Mikio
Heinrich Samuel M.
Kabushiki Kaisha Toshiba
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