Method of manufacturing a semiconductor device

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148175, 148188, H01L 2122

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040452581

ABSTRACT:
A method of producing a semiconductor arrangement comprises diffusing through a diffusion mask into a semiconductor body a semiconductor region of a first type of conductivity and applying to the semiconductor body a semiconductor region of a second type of conductivity extending to the surface of the semiconductor body at least partially in a region which is caused by the diffusion mask when diffusing the region of the first type of conductivity.

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patent: 3367115 (1972-06-01), Barson et al.
patent: 3408544 (1968-10-01), Teszner
patent: 3436282 (1969-04-01), Shoda
patent: 3484309 (1969-12-01), Gilbert
patent: 3484313 (1969-12-01), Tauchi et al.
patent: 3584266 (1971-06-01), Schilling
patent: 3697827 (1972-10-01), Simon
patent: 3717507 (1973-02-01), Abe
Ho et al. "Low-Power Monolithic Storage," IBM Tech. Discl. Bull.," vol. 11, No. 7, Dec. 1968, pp. 867, 868.

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