Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1988-12-28

1990-01-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437245, 437189, 4272552, 427124, H01L 2100, H01L 2102, H01L 2131, H01L 2160

Patent

active

048928437

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen.
According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.

REFERENCES:
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4629635 (1986-12-01), Brors
Schmitz et al., "Comparison of Step Coverage and Other Aspects of H.sub.2 /WF.sub.6 and SiH.sub.4 /WF.sub.6 Reduction Schemes Used in Blanket LPCVD of Tungsten", Procs. Tenth Int'l Conf. on CVD (Electrochem. Soc.), edited by Cullen et al., vol. 87-8, Oct. 1987, pp. 625-634.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-145464