Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1985-10-04
1987-02-24
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
156643, 427 39, 427 82, 427 94, H01L 21318
Patent
active
046456830
ABSTRACT:
A method of manufacturing a semiconductor device is provided in which a surface of a substrate containing gallium and arsenic is treated in a first plasma containing hydrogen, and then, is coated with a layer of silicon nitride in a second plasma containing silicon and nitrogen. According to the invention, arsenic is added to the first plasma in the form of arsine. Further, the substrate is heated to a temperature below 450.degree. C. during such treatment. After this treatment, but before the coating, the substrate is superficially converted into a surface layer of gallium and arsenic nitrides in a third plasma containing nitrogen. In this way, an almost ideal passivation of the surface of a gallium and arsenic containing substrate can be obtained.
REFERENCES:
patent: 4361461 (1982-11-01), Chang
patent: 4436770 (1984-03-01), Nishizawa
patent: 4455351 (1984-06-01), Camlibel
Bayraktaroglu et al, "Silicon-Nitride-Gallium Arsenide MIS Structures Produced by Plasma Enhanced Deposition", J. Appl. Phys. 52(5), May 1981.
Clark et al "Improvements in GaAs/Plasma-Deposited Silicon Nitride . . . " J. Vac. Sci. Technol. 21(2), Jul./Aug. 1982, pp. 453-457.
Gourrier Serge
Theeten Jean-Bernard
Miller Paul R.
Smith John D.
U.S. Philips Corporation
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