Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2008-11-25
2010-11-09
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S107000, C438S113000, C257SE21511
Reexamination Certificate
active
07829381
ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of (1) applying an underfill composition to a surface of a silicon wafer, (2) dicing the silicon wafer into chips, (3) positioning the chip, and (4) bonding the chip to the substrate, characterized in thatthe underfill composition consists of a first underfill composition and a second underfill composition,the step (1) comprises the steps of(i) applying the first underfill composition on the surface of the silicon wafer and then bringing the applied first underfill composition into a B-stage to form a layer of the first underfill composition having a thickness ranging from 0.5 to 1.0 time the height of the solder bump, and(ii) applying the second underfill composition on the B-stage first underfill composition layer and bringing the applied second underfill composition into a B-stage to form a layer wherein a total thickness of the B-stage first underfill composition and the B-stage second underfill composition ranges from 1.0 to 1.3 times the height of the solder bump, and thatthe first underfill composition comprises an epoxy resin and a filler, the filler being in an amount of from 30 to 85 wt % of a solid content of the first underfill composition, andthe second underfill composition comprises an epoxy resin, a flux and/or a curing agent functioning also as a flux.
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Birch & Stewart Kolasch & Birch, LLP
Ghyka Alexander G
Nikmanesh Seahvosh J
Shin-Etsu Chemical Co. , Ltd.
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