Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-05-25

2008-08-26

Quach, Tuan N. (Department: 2826)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S437000, C438S787000, C257SE21271, C257SE21546

Reexamination Certificate

active

07416955

ABSTRACT:
A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first insulating film, forming a polymer solution layer containing a silicon-containing polymer on the water-adhered first insulating film, and forming a second insulating film containing silicon oxide as a main ingredient from the polymer solution layer, wherein forming the second insulating film includes forming silicon oxide by a reaction between the polymer and water adhered to the first insulating film.

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