Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-01-31
2006-01-31
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
Reexamination Certificate
active
06992009
ABSTRACT:
Provided is a method of manufacturing a semiconductor device, comprising preparing a base comprising a semiconductor substrate having a device surface side, a p-type semiconductor layer formed on the device surface side of the semiconductor substrate, a n-type semiconductor layer which is formed on the device surface side of the semiconductor substrate and forms a p-n junction together with the p-type semiconductor layer, and wirings formed above the semiconductor substrate and electrically connected to each other via the p-n junction, applying a chemical solution containing electrolytes to a device surface of the base, the wirings being exposed at the device surface of the base, and applying a liquid selected from the group consisting of anode water, oxidizing gas-dissolved water, radical-containing water, cathode water, reducing gas-dissolved water and an organic substance-adding solution to the device surface of the base.
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Stanley Wolf Silicon Processing for the VSLI era vol. 2 Lattice Press pp. 280-282,460,494,535.
Korean Office Action mailed Aug. 20, 2004 regarding prior art above and English translation.
Kodera Masako
Matsui Yoshitaka
Blum David S.
Kabushiki Kaisha Toshiba
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