Method of manufacturing a semiconductor device

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S124000, C438S126000, C438S127000

Reexamination Certificate

active

06927096

ABSTRACT:
A method of producing a thin, non-lead type semiconductor device superior in packaging performance is to be provided. A recess and grooves are formed on a main surface of a conductive substrate in accordance with predetermined patterns to define plural compartments surrounded with the recess and grooves, and plural product-forming portions are formed each by one or plural recesses and plural compartments. Thereafter, a back surface of a semiconductor element is fixed onto a depressed bottom of each of the product-forming portions through an adhesive, then electrodes formed on the semiconductor element and the compartments are connected with each other through conductive wires, an insulating resin is formed on the main surface of the substrate so as to cover the semiconductor element and the wires, then a back surface of the substrate is removed a predetermined thickness, thereby allowing the compartments to be electrically isolated each independently and allowing the adhesive to be exposed, a plating film is formed on surfaces of the compartments exposed to a surface of the resin layer, and the resin layer is cut along boundary portions of the product-forming portions to fabricate plural, thin, non-lead type semiconductor devices in each of which the back surface of the semiconductor element is lower than the main surfaces of the compartments.

REFERENCES:
patent: 5866948 (1999-02-01), Murakami et al.
patent: 5981314 (1999-11-01), Glenn et al.
patent: 6177288 (2001-01-01), Takiar
patent: 6399415 (2002-06-01), Bayan et al.
patent: 6723585 (2004-04-01), Tu et al.
patent: 2000-286376 (2000-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3522717

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.