Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1989-06-29

1990-08-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437228, 437235, 437982, 148DIG133, H01L 2131, H01L 2188

Patent

active

049487434

ABSTRACT:
A method of manufacturing a semiconductor device, includes the following steps: part of an insulation film is left on the bottom of a contact hole of the insulation film formed on a semiconductor substrate or a separate insulation film is otherwise formed, under which condition a satisfactory slope is formed on the peripheral edge and the side wall of the contact hold by providing the semiconductor substrate with a heat treatment. According to the present invention, it is possible thereafter to improve the step coverage of a metal interconnection to be formed on the surface of the insulation film and to prevent breakage of the metal interconnection, thereby substantially improving the reliability of the resulting semiconductor device.

REFERENCES:
patent: 3825442 (1974-07-01), Moore
patent: 4104784 (1978-08-01), Klein
patent: 4733291 (1988-03-01), Levy et al.

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