Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1989-11-20

1990-08-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 437 62, 437 67, 437 68, 437 83, H01L 21265, H01L 2120

Patent

active

049487426

ABSTRACT:
Oxygen ions or nitrogen ions are implanted into a semiconductor substrate to form a dielectric layer in the semiconductor substrate. An epitaxial semiconductor layer of at least 2 .mu.m in thickness, having excellent reproducibility and good crystallinity, is formed on a residual semiconductor layer on the dielectric layer by epitaxial growth, to serve as a region for forming semiconductor elements. Thus, a semiconductor device having high isolation breakdown voltage is impemented.
Further, both oxygen ions and nitrogen ions are respectively implanted into a portions of a semiconductor substrate, which are adjacent to each other along the direction of thickness, to form two dielectric layers. Thus, a semiconductor device having higher isolation breakdown voltage is implemented.

REFERENCES:
patent: 4676841 (1987-06-01), Celler
Doo et al. IBM Tech. Disc. Bull., V. 8, No. 5 (Oct. 1965), pp. 802-803.
IEEE Ransactions on Electron Devices, vol. ED-33, No. 1, Jan. 1986, pp. 126-132, "High Voltage CMOS SIMOX Technology and . . . ".
Journal of the Electronchemical Society, Jan. 1977, pp. 5C-12C., "Dielectric Isolation: Comprehensive . . . ".

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