Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1988-12-16

1990-11-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437 63, 437 64, 437203, 437918, 437919, H01L 2176

Patent

active

049719262

ABSTRACT:
A semiconductor device comprising a semiconductor substrate having a principal surface constituted by crystal plane (100) formed with a groove, which is utilized for an element isolation region, a capacitor element, etc., wherein at least one of the side wall surfaces of the groove is constituted by a (100) crystal plane. There is also proposed a method of forming a groove having at least one crystal plane side surface in a crystal plane surface of a semiconductor substrate.

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