Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-03-15

2005-03-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

C438S016000, C438S017000, C438S018000

Reexamination Certificate

active

06867054

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed. The manufacturing method comprises heating a reactor, setting a semiconductor wafer in the reactor, supplying a reactive gas into the reactor to form a film on the semiconductor wafer or on an inner surface of the reactor, and measuring a temperature change outside the reactor and a temperature change inside the reactor to determine a thickness of the film on the semiconductor wafer or on the inner surface of the reactor on the basis of a relationship between a ratio of the temperature changes and a thickness of the film.

REFERENCES:
patent: 5166080 (1992-11-01), Schietinger et al.
patent: 5294262 (1994-03-01), Nishimura
patent: 6328221 (2001-01-01), Moore et al.
patent: 4-239742 (1992-08-01), None
patent: 2001-7097 (2001-12-01), None
Theodropuolou et al., “Model Reduction for Optimization of RTCVD Systems,” IEEE Transactions on Semiconductor Manufacturing, vol. 11, No. 1, Feb. 1998, pp. 91-98.

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