Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-05-17

2005-05-17

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S778000, C438S959000

Reexamination Certificate

active

06893977

ABSTRACT:
A method of fabricating a semiconductor device is disclosed. An example method sequentially forms a gate insulation film and a sacrificial film on a semiconductor substrate. In addition, the example method forms a bowing hollow by selectively etching the sacrificial layer, forms gate material on the gate insulation film exposed through the bowing hollow and the sacrificial film, and forms a gate by anisotropically etching the gate material such that the gate material remains on an inner side wall of the bowing hollow.

REFERENCES:
patent: 5869374 (1999-02-01), Wu
patent: 5880004 (1999-03-01), Ho
patent: 6063699 (2000-05-01), Hanafi et al.
patent: 6548388 (2003-04-01), Hwang et al.

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