Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1980-11-19

1982-10-05

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 156651, C23C 1500, C23F 100

Patent

active

043527248

ABSTRACT:
A method of manufacturing a semiconductor device having a multi-layer structure comprises the steps of patterning in accordance with a predetermined pattern a thin film of photoresist formed on a film to be etched which has been formed on a semiconductor substrate, etching the film to be etched partly by an isotropic etching using said patterned film as a mask, completing the etching by an anisotropic etching in the direction of its depth, resulting in tapered or inclined sides on the etched film. The isotropic and anisotropic etchings may be carried out in the same apparatus by changing the reactive gases used in these etchings and/or the conditions of each etching, such as the amount of gas, the gas pressure and the applied radio frequency power.

REFERENCES:
W. W. Koste et al., "Via Profiling by Plasma Etching With Varying Ion Energy", IBM Tech. Disc. Bull., vol. 22, pp. 2737-2738, Dec. 1979.

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