Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2008-05-20
2008-05-20
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S460000, C438S613000
Reexamination Certificate
active
07375007
ABSTRACT:
To provide a penetration electrode having high quality. A method of manufacturing a semiconductor device includes the following steps: (a) forming a concave part from a first face of a semiconductor substrate in which an integrated circuit is formed; (b) providing a resin layer at least on the bottom face of the concave part; (c) forming a conductive part to an inner side of the resin layer of the concave part; (d) disposing the resin layer from a second face opposite to the first face of the semiconductor substrate by wet etching; and (e) exposing the conductive part from the second face of the semiconductor substrate.
REFERENCES:
patent: 6537874 (2003-03-01), Nakamura et al.
patent: 6841849 (2005-01-01), Miyazawa
patent: 7029937 (2006-04-01), Miyazawa
patent: 2002/0024118 (2002-02-01), Okoshi et al.
patent: 2004/0142574 (2004-07-01), Miyazawa
patent: A-60-7148 (1985-01-01), None
patent: A-3-209828 (1991-09-01), None
patent: A-2001-53218 (2001-02-01), None
patent: A-2002-76307 (2002-03-01), None
patent: A-2002-76308 (2002-03-01), None
patent: A-2003-17558 (2003-01-01), None
patent: A-2003-76111 (2003-03-01), None
patent: A-2003-197855 (2003-07-01), None
patent: WO 03/079431 (2003-09-01), None
patent: WO 03/079432 (2003-09-01), None
Chen Jack
Oliff & Berridg,e PLC
Seiko Epson Corporation
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