Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2011-07-12

2011-07-12

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S135000, C438S197000, C257S737000, C257S778000

Reexamination Certificate

active

07977165

ABSTRACT:
Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

REFERENCES:
patent: 4121240 (1978-10-01), Katto
patent: 5122481 (1992-06-01), Nishiguchi
patent: 5291374 (1994-03-01), Hirata et al.
patent: 5757081 (1998-05-01), Chang et al.
patent: 6022751 (2000-02-01), Shindo et al.
patent: 6045866 (2000-04-01), Chuang
patent: 6204558 (2001-03-01), Yanagida
patent: 6927167 (2005-08-01), Fukuda et al.
patent: 6987320 (2006-01-01), Miyachi et al.
patent: 7122447 (2006-10-01), Abe
patent: 2001/0005043 (2001-06-01), Nakanishi et al.
patent: 2003/0025184 (2003-02-01), Morozumi
patent: 11-135533 (1999-05-01), None
patent: 2001-271494 (2001-10-01), None
patent: 2002-134441 (2002-05-01), None
patent: 2003-332271 (2003-11-01), None
patent: 2004-104004 (2004-04-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2691468