Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1976-12-27

1978-07-18

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, H01L 2126

Patent

active

041013441

ABSTRACT:
In Locos N-channel MOST-IC's underpasses can be obtained below the locos pattern by performing, at the area where the underpasses are to be formed, an As or Sb implantation prior to providing the locos. By using the nitride mask as an implantation mask, the locos and the source/drain zones of the transistors can be provided in a self-registering manner with respect to the underpasses.

REFERENCES:
patent: 3873372 (1975-03-01), Johnson
patent: 4013489 (1977-03-01), Oldham

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