Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1995-04-25

1997-10-07

Niebling, John

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 56, 437 57, 437 58, 437154, 148DIG35, H01L 21265

Patent

active

056747632

ABSTRACT:
Disclosed herein is a semiconductor device comprising a semiconductor substrate, a well region provided in the surface of the substrate, a plurality of MOSFETs provided in the well region. The well region has parts having a low surface impurity concentration. Some of the MOSFETs have their channel regions provided in those parts of the well region which have the low surface impurity concentration. The other MOSFETs have their channel regions provided in other parts of the well region.

REFERENCES:
patent: 4315781 (1982-02-01), Henderson
patent: 4410904 (1983-10-01), Wollesen
patent: 4472871 (1984-09-01), Green et al.
patent: 4784968 (1988-11-01), Komori et al.
patent: 5079177 (1992-01-01), Lage et al.
patent: 5148050 (1992-09-01), Koide
patent: 5210437 (1993-05-01), Sawada et al.
patent: 5250835 (1993-10-01), Izawa
patent: 5363328 (1994-11-01), Browning, III et al.
patent: 5369045 (1994-11-01), Ng et al.
patent: 5385857 (1995-01-01), Solo De Zaldivar

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