Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1976-10-29

1978-05-09

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 156648, H01L 2122

Patent

active

040885160

ABSTRACT:
A method of manufacturing a semiconductor device, comprises the steps of masking desired parts of a semiconductor substrate with a material which is impervious to an etchant for the substrate, exposing the substrate to the etchant to thereby etch substrate parts which lie directly beneath end parts of the etchant-impervious material and substrate parts which are not masked, applying a solution preferentially into the parts directly beneath the end parts of the etchant-impervious material among the etched substrate parts, the solution being capable of being converted into a semiconduct or oxide by a predetermined heat treatment, and heat-treating the substrate in order to oxidize the etched substrate surface parts.

REFERENCES:
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3832202 (1974-08-01), Ritchie
patent: 3892608 (1975-07-01), Kuhn
patent: 3900350 (1975-08-01), Appels et al.
patent: 3961999 (1976-06-01), Antipov
patent: 4002511 (1977-01-01), Magdo et al.

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