Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1976-06-09

1977-09-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, H01L 21225

Patent

active

040466078

ABSTRACT:
A silicon layer is deposited over the insulating layer covering the surface of the semiconductor substrate and apertured to define a contact window through which the silicon layer is connected with a one-conductivity-type region formed in the semiconductor substrate. An impurity of the one conductivity type is introduced into the one-conductivity-type region through the contact window from the silicon layer. This impurity may be supplied from the surface of the silicon layer or may be preliminarily doped in the silicon layer. A conductive layer is deposited over the silicon layer and is formed to a predetermined pattern. Thereafter, the silicon layer is formed to the same pattern.

REFERENCES:
patent: 3806361 (1974-04-01), Lehner
patent: 3847687 (1974-11-01), Davidsohn

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