Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1970-05-04

1976-02-03

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29576B, 29590, B01J 1700

Patent

active

RE0287032

ABSTRACT:
A method of making a field effect transistor in which a gate electrode is provided on a semiconductor layer and then the surface subjected to electron or ion bombardment to form the source and drain electrodes on opposite sides of the gate, acting as a mask, and spaced apart by the width of the gate.

REFERENCES:
patent: 2563503 (1951-08-01), Wallace
patent: 2735948 (1956-02-01), Sziklai
patent: 2787564 (1957-04-01), Shockley
patent: 2981877 (1961-04-01), Noyce
patent: 3298863 (1967-01-01), McCusken
patent: 3311756 (1967-03-01), Nagata et al.
patent: 3472712 (1969-10-01), Bower

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