Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1991-05-16

1992-03-03

Hearn, Brain E.

Fishing, trapping, and vermin destroying

437235, 437 73, 437238, 148DIG137, 1566591, H01L 2147

Patent

active

050932837

ABSTRACT:
A surface layer (10), for example oxide, is provided on a first major surface (2) of a semiconductor body (1). A masking layer (11) having at least one window (12) is defined on the surface layer (10). The surface layer (10) and the semiconductor body (1) are etched through the window (12) to define an opening (13in the surface layer (10) and a recess (14) within the semiconductor body (1) extending beneath the surface layer (10) so that a rim portion (10a) of the surface layer (10) overhangs the recess (14). The rim portion (10a) of the surface layer (10) is removed by causing a settable flowable material (15) to flow onto the surface layer (10) and into the recess (14) and then causing the flowable material to set and thereby change volume to apply a force for causing the rim portion (10a) to break away from the remainder ( 10b) of the surface layer (10). The set flowable material (150) and thus the rim portion (10a) of the surface layer (10) are then removed. The recess (14) may form a passivation moat bounding a pn junction (5a) and may subsequently be provided with a glass passivating layer (8).

REFERENCES:
patent: 3578515 (1971-05-01), Borrello et al.
patent: 3639186 (1972-02-01), Forster et al.
patent: 4354896 (1982-10-01), Hunter et al.
patent: 4497684 (1985-02-01), Sebesta
patent: 4866004 (1989-09-01), Fukushima
patent: 4892838 (1990-01-01), Fisher et al.
patent: 4946804 (1990-08-01), Pritchard et al.
patent: 5032541 (1991-07-01), Sakamoto et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-272052