Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1990-04-03

1991-01-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 46, 437 55, 437162, 148DIG10, 148DIG11, 148DIG96, 357 35, 357 59, H01L 21331, H01L 2138

Patent

active

049818066

ABSTRACT:
A device area (16) is defined in a semiconductor body (10) by forming at one major surface (12, 12a) of the body a step (11) having a side wall (11a) and top surface (11b) bounding the device area 16. A silicon layer (13) is deposited so as to cover the side wall (11a) and top surface (11b) of the step and an adjoining lower surface area (12c). Dopant impurities are introduced so that the side wall silicon region (13a) is shielded from the dopant impurities and the undoped side wall silicon region (13a) is later removed by selective etching. The silicon region (13c) on the lower surface area (12a) adjoining the step (11) is masked and the silicon region (13a) on the top surface (11b) at the step (11) removed to leave the doped silicon region (13c) on the one major surface (12a) for contacting a device region (29), for example the base region of a transistor, of the device area.

REFERENCES:
patent: 4338138 (1982-07-01), Cavahere et al.
patent: 4378630 (1983-04-01), Horng et al.
patent: 4674173 (1987-06-01), Hahn et al.
patent: 4703554 (1987-11-01), Havemann
patent: 4757027 (1988-07-01), Vora
patent: 4769687 (1988-09-01), Nakazato et al.
patent: 4887145 (1989-12-01), Washino et al.

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