Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1995-07-25

1996-09-24

Dang, Trung

Fishing, trapping, and vermin destroying

437 40, 437 41, 437160, 437164, 437158, H01L 21265

Patent

active

055590497

ABSTRACT:
The semiconductor device of the present invention is formed by forming a gate electrode in the form of T-shape, forming auxiliary gates which are capacitively coupling with the T-shape gate electrode at undercut portions below both sides of T-shape gate, forming a lightly doped region in the silicon substrate below the auxiliary gate by utilizing a doped oxide film, and forming a heavily doped region connected to a lightly doped region.
Accordingly, the present invention can form a short channel length required for a highly integrated circuit device, and greatly improve the operational speed of the device by reducing channel resistance of a lightly doped region of LDD structure.

REFERENCES:
patent: 4837179 (1989-06-01), Foster et al.
patent: 5024959 (1991-06-01), Pfiester
patent: 5053849 (1991-10-01), Izawa et al.
patent: 5210435 (1993-05-01), Roth et al.
patent: 5272100 (1993-12-01), Satoh et al.
patent: 5286665 (1994-02-01), Muragishi et al.
patent: 5324686 (1994-06-01), Tsunashima

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