Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1990-07-03

1992-03-03

Hearn, Brain E.

Fishing, trapping, and vermin destroying

437913, 437 50, 437 41, 148DIG53, H01L 21265

Patent

active

050932730

ABSTRACT:
A semiconductor device comprising three recessed portions formed at a very small pitch on the surface of a semiconductor substrate, remaining regions formed between these recessed portions as impurity diffused regions serving as the source and the drain, respectively, and a conductive region as a gate electrode formed through an insulating film within the central recessed portion, and a method of manufacturing such a semiconductor device are disclosed. With this device, its gate length can be made shorter than that in the prior art and the junction leakage is reduced, resulting in miniaturization and an improvement in the characteristics.

REFERENCES:
patent: 4660062 (1987-04-01), Nishizawa et al.
patent: 4685196 (1987-08-01), Lee

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