Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1980-08-15

1982-06-01

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148187, 148188, 357 59, 357 91, H01L 21225

Patent

active

043320767

ABSTRACT:
A method of manufacturing a semiconductor device having at least one insulated gate field effect transistor in which a silicon body is provided with a silicon dioxide gate insulation layer and in which a boron-doped polysilicon electrode layer is formed on said layer, characterized in that the electrode layer is deposited by means of a low-pressure process, that the boron doping of the electrode layer is obtained by ion implantation, and that the silicon body is then subjected to a thermal treatment in an atmosphere containing hydrogen in which boron is diffused from the electrode layer through the gate insulation layer into a channel region underlying the electrode layer.

REFERENCES:
patent: 3540925 (1970-11-01), Athanas et al.
patent: 3704178 (1972-11-01), Hill
patent: 3775191 (1973-11-01), McQuhae
patent: 4062699 (1977-12-01), Armstrong
patent: 4063967 (1977-12-01), Graul et al.
patent: 4151007 (1979-04-01), Levinstein et al.
Ghezzo et al., J. Electrochem. Soc.: Solid-State Science and Technology, vol. 120, No. 1, Jan. 1973, pp. 146-148.
Hofstein, Solid-State Electronics, Pergamon Press, G.B., vol. 10, pp. 657-670, 1967.

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