Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-08-19
1983-02-15
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29590, 148187, H01L 2122
Patent
active
043732518
ABSTRACT:
An undoped polycrystalline silicon layer 6 is provided on an electrically insulating layer 2 at the surface 8 of a semiconductor body 1 and a metal layer 4, for example of molybdenum, is provided on layer 6. After heating to convert part of layer 3 into a metal silicide layer 5 a dopant, for example phosphorus, is introduced into the polycrystalline layer 4 through layer 5. This method can be used to make an insulated gate field effect device where the gate comprises a double layer structure of metal silicide on polycrystalline silicon.
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Miller Paul R.
Ozaki G.
U.S. Philips Corporation
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