Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-02-13
1983-03-08
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148188, 148189, 29577C, 29571, H01L 21223, H01L 21225
Patent
active
043759998
ABSTRACT:
A method of manufacturing a semiconductor device for simultaneously forming a plurality of diffused regions of selectively different diffusion depths, comprises forming polycrystalline semiconductor layers of corresponding, selectively different depths on the semiconductor substrate surface provided with a diffusion mask having a plurality of diffusion windows. By the impurity diffusion into the substrate through the windows at the polycrystalline semiconductor layer interface with the substrate, a comparatively shallow diffused region and a comparatively deep diffused region are formed simultaneously by a single diffusion process, respectively, under the comparatively thick polycrystalline semiconductor layer and the comparatively thin polycrystalline semiconductor layer.
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Nawata Kazumasa
Suzuki Hirokazu
Ozaki G.
Vlsi Technology Research Association
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