Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1975-02-11

1976-07-13

Drummond, Douglas J.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 148 15, 148187, 156 3, 156 17, 427 88, H01L 2122, H01L 21316

Patent

active

039685624

ABSTRACT:
A method of manufacturing semiconductor devices having one or more insulated gate field effect transistors in which a sunken oxide layer is obtained by local oxidation. In those cases in which above a doped zone a thin insulating layer is necessary, for example because said layer forms the dielectric of a capacitor, the invention provides a simplification of the manufacture in that at area in question a thicker sunken oxide layer is first provided which is removed fully or partly in a later stage so as to be able to obtain the desired thinner layer.

REFERENCES:
patent: 3623217 (1971-11-01), Kawagoe et al.
patent: 3676921 (1972-07-01), Kooi
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3761327 (1973-09-01), Harlow et al.
patent: 3899372 (1975-08-01), Esch et al.
patent: 3909320 (1975-09-01), Gauge et al.
patent: 3923583 (1975-12-01), Hayaski et al.

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