Method of manufacturing a semiconductor comprising an oxygen-con

Details Method of manufacturing a semiconductor comprising an oxygen-con Method of manufacturing a semiconductor comprising an oxygen-con

1995-01-31

1999-08-17

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

438770, 438301, H01L 21324

Patent

active

059407220

ABSTRACT:
Si melt is prepared in a crucible with a quartz surface, the crucible and a seed crystal are rotated at a relative speed of 30 rpm or more to melt quartz into Si melt, and a Si single crystal ingot is grown to have an interstitial oxygen concentration of about 1.5.times.10.sup.18 atoms/cm.sup.3 or more. A wafer is sliced from the ingot and subjected to a heat treatment in a hydrogen atmosphere at 1200.degree. C. for one hour. Thereafter, a thermal oxide film is formed on the surface of a wafer, and a MOS transistor or capacitor is formed by using this thermal oxide film.

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