Method of manufacturing a semiconductor component, in particular

Details Method of manufacturing a semiconductor component, in particular Method of manufacturing a semiconductor component, in particular

1994-02-03

1996-01-23

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

148DIG95, H01L 2120

Patent

active

054864895

ABSTRACT:
In the method, a doped semiconductor coating is to be deposited on a disturbed surface (S) of a semiconductor base (9) doped with a dopant having the same conductivity type as the coating. According to the invention, prior to depositing a main layer (28) of the coating (10), a superdoped layer (24) is deposited, which superdoped layer has a dopant concentration that is greater than twice the mean concentration of the coating. The invention applies in particular to manufacturing a semiconductor laser for an optical fiber telecommunications system.

REFERENCES:
H. Jung et al, "InP/InGaAsP Buried Mesa Ridge Laser: A new Ridge Laser with Reduced Leakage Currents", Applied Physics Letters, vol. 54, No. 22, May 29, 1989, pp. 2171-2173.

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