Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2006-08-01
2006-08-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S559000, C257S582000, C438S325000, C438S329000, C438S330000
Reexamination Certificate
active
07084485
ABSTRACT:
A method of manufacturing a semiconductor component includes: providing a semiconductor substrate (210, 510); forming a trench (130, 430) in the semiconductor substrate to define a plurality of active areas separated from each other by the trench; forming a buried layer (240, 750) in the semiconductor substrate underneath a portion of the trench, where the buried layer is at least partially contiguous with the trench; after forming the buried layer, depositing an electrically insulating material (133, 810) in the trench; forming a collector region (150, 950) in one of the plurality of active areas, where the collector region forms a contact to the buried layer; forming a base structure over the one of the plurality of active areas; and forming an emitter region over the one of the plurality of active areas.
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patent: 6239477 (2001-05-01), Johnson
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Bryan Cave LLP
Flynn Nathan J.
Freescale Semiconductor Inc.
Mandala Jr. Victor A.
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