Method of manufacturing a semiconductor component and...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Reexamination Certificate

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C257S183000, C257S187000

Reexamination Certificate

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06855965

ABSTRACT:
A method of manufacturing a semiconductor component and the component thereof includes forming a dielectric layer (620) over a portion of a passivation ledge (640) in an emitter layer (280) and overlapping a base contact (660) onto the dielectric layer (620).

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