Method of manufacturing a semiconductor component

Details Method of manufacturing a semiconductor component Method of manufacturing a semiconductor component

2007-12-18

2007-12-18

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Avalanche diode manufacture

C438S091000, C438S983000

Reexamination Certificate

active

11182597

ABSTRACT:
A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth semiconductor region (140, 340) above the third semiconductor region, a fifth semiconductor region (150, 350) above the second semiconductor region and at least partially contiguous with the fourth semiconductor region, a sixth semiconductor region (160, 360) above and electrically shorted to the fifth semiconductor region, and an electrically insulating layer (180, 380) above the fourth semiconductor region and the fifth semiconductor region. A junction (145, 345) between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction, which is located only underneath the electrically insulating layer. In one embodiment, a seventh semiconductor region (170) circumscribes the third, fourth, fifth, and sixth semiconductor regions.

REFERENCES:
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patent: 3959646 (1976-05-01), DE Cremoux
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patent: 4599631 (1986-07-01), Tsuzuki
patent: 5917227 (1999-06-01), Ogihara et al.
patent: 6573528 (2003-06-01), Braddock
patent: 7170112 (2007-01-01), Ning
patent: 2003/0183855 (2003-10-01), Dries et al.
patent: 2003/0189220 (2003-10-01), Hamerski

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