Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2011-06-21
2011-06-21
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S778000, C257S783000, C257SE21502, C438S109000, C438S113000, C438S613000
Reexamination Certificate
active
07964962
ABSTRACT:
A method of making a semiconductor apparatus provides a plurality of electrode pads on a main surface of a semiconductor chip, and a plurality of bump electrodes on the electrode pads. The method also provides a wired board which is allocated in a side of the main surface of the chip and is positioned in a central area of the main surface of the chip so as to be separated from an edge part of the chip by at least 50 μm or more, a plurality of external terminals on the wired board and which are electrically connected to a plurality of bump electrodes through wirings of the wired board, and a sealing part between the chip and the wired board, the sealing part being made of underfill material that covers a connection part between the bump electrode and the wiring.
REFERENCES:
patent: 6064114 (2000-05-01), Higgins, III
patent: 6137185 (2000-10-01), Ishino et al.
patent: 6975035 (2005-12-01), Lee
patent: 7314780 (2008-01-01), Shimizu et al.
patent: 2000-003939 (2000-07-01), None
patent: 2000-106257 (2000-11-01), None
patent: 2004-006670 (2004-08-01), None
patent: 2005-032820 (2005-03-01), None
patent: 1020000068303 (2000-11-01), None
patent: 10-0332863 (2002-04-01), None
patent: 20020049821 (2002-06-01), None
patent: WO99/23696 (1999-05-01), None
KR Office Action dated Jul. 1, 2010 (English translation attached).
German Office Action and its English translation of Oct. 18, 2010 in corresponding German Serial No. 10 2008 031 511.7-33.
Anjoh Ichiro
Watanabe Mitsuhisa
Elpidia Memory, Inc.
Le Dung A.
Young & Thompson
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