Method of manufacturing a semiconductor apparatus

Details Method of manufacturing a semiconductor apparatus Method of manufacturing a semiconductor apparatus

1997-05-21

1999-02-02

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

438250, 438393, H01L 2120

Patent

active

058664637

ABSTRACT:
In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer. A P-type collector-contact/base leakage prevention layer, which has a higher impurity concentration than said P-type collector layer, is formed at least in that region of said P-type collector layer which is in contact with said oxide insulating layer, so as to prevent the generation of a leakage current between said P-type collector contact layer and said N-type base layer.

REFERENCES:
patent: 5336632 (1994-08-01), Imamura
patent: 5395782 (1995-03-01), Ohkoda et al.
patent: 5622887 (1997-04-01), Miwa et al.

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