Fishing – trapping – and vermin destroying
Patent
1995-06-16
1996-11-05
Fourson, George
Fishing, trapping, and vermin destroying
437 46, 437193, 437200, H01L 21265
Patent
active
055717357
ABSTRACT:
In a method of manufacturing a semiconductor device, a step (d) of forming metal silicide films (20) on source and drain regions (17, 18) and on gate electrodes (71, 81) comprises selectively depositing silicon thin films (19) on the source and drain regions and the gate electrodes, the silicon thin films having impurity concentration less than 10.sup.19 cm.sup.-3 ; amorphizing the silicon thin films, the gate electrodes, and a silicon semiconductor substrate (11) by ion implantation; depositing a metal film on the silicon thin films, on the gate electrodes, and on the silicon semiconductor substrate; performing heat treatment of the metal film to form the metal silicide films (20) on the source and drain regions and the gate electrodes; and removing unreacted metal films (21) remaining on insulating films (16-1, 16-2). Preferably, the selectively depositing step may be performed by a chemical vapor deposition process of a reaction rate-determining mode by using disilane gas or silane gas.
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Takahashi, M., et al., "Anomalous Resistance in 0.1 .mu.m-Region Ti-Silicided Poly Si Gate", Extended Abstracts of the 1993 Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 458-460.
Beyers, et al., "Titanium Disilicide Formation on Heavily Doped Silicon Substrates", J. Appl. Phys., vol. 61, No. 11, Jun. 1, 1987, pp. 5110-5117.
Mogami Tohru
Tatsumi Toru
Bilodeau Thomas G.
Fourson George
NEC Corporation
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