Method of manufacturing a semi-insulating silicon layer

Details Method of manufacturing a semi-insulating silicon layer Method of manufacturing a semi-insulating silicon layer

1976-04-19

1978-04-18

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, 357 52, 357 59, 357 91, 427 93, 427 94, H01L 2126

Patent

active

040849864

ABSTRACT:
An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.

REFERENCES:
patent: 3563809 (1971-02-01), Wilson
patent: 3767494 (1973-10-01), Muraoka et al.
patent: 3897274 (1975-07-01), Stehlin et al.
patent: 3900345 (1975-08-01), Lesk
patent: 4014037 (1977-03-01), Matsushita et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semi-insulating silicon layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semi-insulating silicon layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semi-insulating silicon layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2145670