Method of manufacturing a semi-insulating silicon layer

Details Method of manufacturing a semi-insulating silicon layer Method of manufacturing a semi-insulating silicon layer

1976-04-19

1978-03-28

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, 357 52, 357 59, 357 91, 427 93, 427 94, H01L 2126

Patent

active

040812928

ABSTRACT:
Silicon ions are implanted in a silicon dioxide layer on a silicon substrate so that the dioxide layer is converted into a semi-insulating layer having an improved passivation property.

REFERENCES:
patent: 3897274 (1975-07-01), Stehlin et al.
patent: 3900345 (1975-08-01), Lesk
patent: 4014037 (1977-03-01), Matsushita et al.

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