Fishing – trapping – and vermin destroying
Patent
1990-09-10
1995-10-24
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 27, 437 29, 437 34, 437142, 437149, 437152, 437924, 437984, 148DIG10, 257274, 257338, 257351, 257371, H01L 21265
Patent
active
054609844
ABSTRACT:
A method of manufacturing a semiconductor device including the steps of: forming an oxide film on the surface of a semiconductor substrate, and thereafter injecting ions of a first conductivity type on the entire surface of the semiconductor substrate; forming a first well through a first thermal diffusion; injecting ions of a second conductivity type through the oxide film into a second well region within the first well; and removing the oxide film formed on the second well region, and thereafter forming a second well having a depth smaller than that of the first well. The semiconductor device manufactured by this method has a first well of a first conductivity type formed on the entire surface of a semiconductor substrate and having higher impurity concentration than that of the semiconductor substrate and a second well of a second conductivity type opposite to said first conductivity type formed within a desired region of said first well. The depth of said first well which is suitable for forming trench capacitors is greater than that of said second well.
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Chaudhuri Olik
Kabushiki Kaisha Toshiba
Pham Long
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