Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Sidewall base contact
Reexamination Certificate
1997-09-19
2001-05-22
Pham, Long (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Sidewall base contact
C438S350000, C438S357000, C438S364000, C438S370000, C438S526000, C438S579000, C438S653000, C438S149000, C438S655000, C438S657000, C148SDIG001, C148SDIG001
Reexamination Certificate
active
06235601
ABSTRACT:
FIELD OF INVENTION
The present invention is directed to a technique for manufacturing a self-aligned vertical bipolar transistor on an SOI device. More particularly, the present invention forms such device in a manner to closely control the device dimensions and form a highly conductive base structure of a multiple conductive stack for use in high frequency devices for microwave applications.
BACKGROUND OF THE INVENTION
In communication systems operating at less than 10 Ghz, silicon bipolar transistors can be used. The making of devices for microwave applications has been expensive such as for the making of bipolar MMIC devices using conventional bulk silicon technology. This problem occurs because of the process complexity associated with buried collectors and isolation of the parts.
The making of such devices with SOI technology reduces the complexity of the process with the added advantage of low capacitances. But while a lateral bipolar transistor can be made for use at microwave frequencies, high power has not been achieved in such devices.
SUMMARY OF THE INVENTION
In the present invention, a self-aligned vertical bipolar transistor is provided in which a high density, high power, microwave frequency device is made using silicon technology.
This device is made according to the present invention by the steps of forming an SOI wafer of n and n+ layers of silicon on an insulating layer on a substrate, implanting an n+ collector through the n layer of silicon into the n+ layer of silicon, depositing a multiple layer of four different materials at opposite sides of an active region on the n layer of silicon, forming a p type base within the active region, forming a p+ contact layer to the base below the multiple layer, forming an n+ polysilicon emitter contact on said p type base within said active region, depositing a dielectric layer over the already formed structure, and providing conductive contacts to the collector and the emitter through the dielectric layer.
The formation of the device according to the present invention provides the four different materials of the multiple layer from a conductive poly silicon layer, a barrier layer, a silicide layer and a layer of a low temperature oxide (LTO).
Further, according to the present invention, the multiple layer is used as a mask to form the base region.
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Biren Steven R.
Pham Long
Philips Electronics North America Corporation
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