Method of manufacturing a self-aligned phase-shifting mask

Details Method of manufacturing a self-aligned phase-shifting mask Method of manufacturing a self-aligned phase-shifting mask

1992-04-24

1998-11-24

Chapman, Mark

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058404457

ABSTRACT:
A phase-shifting mask having a light shielding portion, a light permeation portion and a phase-shifting portion on a transparent substrate is manufactured by forming a negative resist layer to the entire surface on a transparent substrate formed with a light shielding material pattern, applying exposure from the rearface of the transparent substrate, followed by applying development to leave the negative resist layer on the light permeation portion, then further continuing development for the negative resist layer to reduce the width and form a sub-space between the negative resist layer and the light shielding portion, to obtain a phase-shifting portion easily and at a high accuracy. The phase-shifting portion can be formed by an easy and simple step under a good controllability free from of the problems of mask alignment between each other.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
Levenson et al, "Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1828-1836.
Levenson et al, "The Phase-Shifting Mask II: Imaging Simulations and Submicrometer Resist Exposures", IEEE Transactions on Electron Devices, vol. ED-31, No. 6, Jun. 1984, pp. 753-763.
Nitayama et al, "New Phase Shifting Mask with Self-aligned Phase Shifters for a Quarter Micron Photolithography", IEDM, 1989, pp. 57-60.
Abstract No. 28a-PD-2, Extended Abstracts (The 37th Spring Meeting, 1990); The Japan Society of Applied Physics and Related Societies, No. 2.

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