Method of manufacturing a self-aligned interlayer contact in a s

Details Method of manufacturing a self-aligned interlayer contact in a s Method of manufacturing a self-aligned interlayer contact in a s

1993-07-02

1994-06-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437 43, 437228, 437984, H01L 21283, H01L 2131

Patent

active

053189256

ABSTRACT:
Described is a method of manufacturing a self-aligned interlayer contact in a semiconductor device. To carry out the etching process of the conducting material easily and to minimize the space occupied by the contact, the invention uses the following steps: a field oxide layer and a source/drain electrode are formed on a semiconductor substrate; then, a first interlayer insulating layer is formed over the substrate and, over it, a bit line is formed; then, a second interlayer insulating layer and a charge storage electrode contact mask are formed over the entire structure; then, the insulating layer on upper part of the bit line that had been exposed by the charge storage electrode contact mask is completely etched, and, for other parts, an insulating layer having a certain thickness is left on the upper part of the source/drain electrode; then, a charge storage electrode contact is formed on the source electrode and the side wall of the bit line is exposed on the side wall of the charge storage electrode contact; finally, an insulating layer for spacers is formed on the side wall of the bit line to expose the source/drain electrode in order to form a charge storage electrode.

REFERENCES:
patent: 4851365 (1989-07-01), Jeuch
patent: 5081060 (1992-01-01), Kim
patent: 5149665 (1992-09-01), Lee
patent: 5219793 (1993-06-01), Cooper et al.
patent: 5262352 (1993-11-01), Woo et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a self-aligned interlayer contact in a s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a self-aligned interlayer contact in a s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a self-aligned interlayer contact in a s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-792500