Patent
1990-12-12
1992-09-15
Larkins, William D.
357 13, 357 20, H01L 2948
Patent
active
051482410
ABSTRACT:
A Schottky diode device can be fabricated by forming a positive resist layer on an insulating layer formed on N type substrate, and patterning the resist layer. The pattern in the resist includes (i) a first isolation region-defining annular open pattern defining therewithin a device-forming region having a predetermined size, (ii) a second isolation region-defining open pattern dividing the device-forming region into a plurality of unit regions each having a maximum size defined to be 500 .mu.m or less, and (iii) a plurality of individual openings having a size of 1 .mu.m or less and arranged at a predetermined pitch in each of the unit regions. The patterned resist is used to pattern the insulating layer, and P type impurity regions including individual regions are formed using the patterned insulating layer as a mask. After removing the insulating layer, a barrier metal is formed forms Schottky barrier diodes with the individual P type impurity regions and connect them in parallel.
REFERENCES:
patent: 4316202 (1982-02-01), Mori
patent: 4641174 (1987-02-01), Baliga
patent: 5017976 (1991-05-01), Sugita
Sixteenth Annual IEEE Power Electronics Specialists Conference Jun. 24-28, 1985, pp. 242-246, Toulouse, FR; B. J. Baliga et al.: "High Current JBS Rectifiers and their Impact on Switching Power Supplies".
Kabushiki Kaisha Toshiba
Larkins William D.
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