Method of manufacturing a Schottky barrier semiconductor device

Details Method of manufacturing a Schottky barrier semiconductor device Method of manufacturing a Schottky barrier semiconductor device

1992-06-18

1993-06-22

Quach, T. N.

Fishing, trapping, and vermin destroying

437177, 437235, 148DIG140, H01L 21283

Patent

active

052216381

ABSTRACT:
According to the present invention, there is provided a method of manufacturing a Schottky barrier semiconductor device with lesser variation of barrier height .phi.B which may stably be adjusted in a wide range. A Schottky barrier is formed by combination of an electrode layer, a Ti thin layer and Al layer. The Ti thin oxide layer between the Ti thin and Al layers may prevent variation of barrier height .phi.B during heat treatment. By controlling vacuum.

REFERENCES:
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4379832 (1983-04-01), Dalal et al.
patent: 4545115 (1985-10-01), Bauer et al.
patent: 5081510 (1992-01-01), Ohtsuka et al.
patent: 5112774 (1992-05-01), Ohtsuka et al.

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